?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com FGA90N30 rev. b FGA90N30 300v pdp igbt september 2006 FGA90N30 300v pdp igbt features ? high current capability ? low saturation voltage: v ce(sat), typ = 1.1v@ i c = 20a ? high input impedance description employing unified igbt technol ogy, FGA90N30 provides low conduction and switching loss. FGA90N30 offers the optimum solution for pdp applications where low condution loss is essential. absolute maximum ratings notes: (1) repetitive test , pulse width = 100usec , duty = 0. 2 * ic_pulse limited by max tj thermal characteristics g c e to-3p symbol description FGA90N30 units v ces collector-emitter voltage 300 v v ges gate-emitter voltage 30 v i c collector current @ t c = 25 c90 a i cm pulsed collector current (note 1) @ t c = 25 c 220 a p d maximum power dissipation @ t c = 25 c 219 w maximum power dissipation @ t c = 100 c87 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc (igbt) thermal resistance, j unction-to-case for igbt -- 0.57 c / w r ja thermal resistance, junction-to-ambient -- 40 c / w t c = 25c unless otherwise noted
2 www.fairchildsemi.com FGA90N30 rev. b FGA90N30 300v pdp igbt package marking and ordering information electrical characteris tics of the igbt t c = 25c unless otherwise noted device marking device package re el size tape width quantity FGA90N30 FGA90N30 to-3p -- -- 30 symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250 a 300 -- -- v b vces / t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 a--0.6--v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 100 a i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 250 na on characteristics v ge(th) g-e threshold voltage i c = 250ua, v ce = v ge 2.5 4.0 5.0 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v -- 1.1 1.4 v i c = 90a , v ge = 15v -- 1.9 -- v i c = 90a , v ge = 15v, t c = 125 c -- 2.0 -- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 1700 - pf c oes output capacitance -- 290 - pf c res reverse transfer capacitance -- 80 - pf switching characteristics t d(on) turn-on delay time v cc = 200v, i c = 20a, r g = 10 , v ge = 15v, resistive load, t c = 25 c -- 30 -- ns t r rise time -- 200 -- ns t d(off) turn-off delay time -- 110 -- ns t f fall time -- 140 300 ns e on turn-on switching loss -- 0.15 -- mj e off turn-off switching loss -- 0.45 -- mj e ts total switching loss -- 0.6 -- mj t d(on) turn-on delay time v cc =200v, i c = 20a, r g = 10 , v ge = 15v, resistive load, t c = 125 c -- 30 -- ns t r rise time -- 210 -- ns t d(off) turn-off delay time -- 110 -- ns t f fall time -- 200 -- ns e on turn-on switching loss -- 0.16 -- mj e off turn-off switching loss -- 0.72 -- mj e ts total switching loss -- 0.88 -- mj q g total gate charge v ce = 200v, i c = 20a, v ge = 15v -- 87 130 nc q ge gate-emitter charge -- 12 18 nc q gc gate-collector charge -- 38 57 nc
3 www.fairchildsemi.com FGA90N30 rev. b FGA90N30 300v pdp igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current level 0123456 0 20 40 60 80 100 t c = 25 o c 20v 15v 12v 10v collector current, i c [a] c o llector-e m itte r v o lta ge, v ce [v ] v ge = 8v 0123456 0 20 40 60 80 100 t c = 125 o c collector current, i c [a] collector-em itter voltage, v ce [v ] 20v 15v 12v 10v v ge = 8v 0123 0 20 40 60 80 comm on em itter v ge = 15v tc = 25 o c tc = 125 o c collector current, i c [a] c o lle cto r-e m itte r v o lta g e , v ce [v ] 0246810 1 10 100 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] g ate-e m itter v oltage, v ge [v ] 25 50 75 100 125 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 common emitter v ge = 15v 90a 4 0a 20a i c = 10a case tem perature, t c ( o c) collector-emitter voltage, v ce [v] 4 8 12 16 20 0 1 2 3 4 5 6 10a 20a 40a 90a com m on em itter t c = 25 o c collector - emitter voltage, v ce [v] g a te - e m itte r v o lta g e , v ge [v ]
4 www.fairchildsemi.com FGA90N30 rev. b FGA90N30 300v pdp igbt typical performance characteristics (continued) figure 7. saturation voltage vs. v ge figure 8. capacitance charaacteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. gate figure 12. turn-o f f c h a r a c t e r i s t i c s v s . g a t e resistance resistance 4 8 12 16 20 0 1 2 3 4 5 6 comm on em itter t c = 125 o c g ate - e m itter v oltage , v ge [v ] collector - emitter voltage, v ce [v] 10a 20a 40a 90a 0.1 1 10 100 1000 cres coes cies c om m on e m itter v ge = 0v, f = 1mhz t c = 25 o c c o lle c to r-e m itte r v o lta g e , v ce [v ] capacitance [pf] 0 102030405060708090 0 5 10 15 vcc = 200v com m on em itter r l = 10 ohm t c = 25 o c gate-emitter voltage, v ge [v] g ate c harge, q g [nc ] 0.1 1 10 100 1000 0.01 0.1 1 10 100 50 s 100 s 1ms dc operation ic max (pulsed) ic max (continuous) single nonrepetitive pulse tc = 25 o c curves must be derated linearly with increase in temperature collector current, ic [a] c ollector - em itter voltage, v ce [v] 0 20406080100 10 100 1000 tr td(on) common emitter v cc = 200v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c gate resistance, r g [ ] switching time [ns] 0 20406080100 10 100 1000 tf td(off) common emitter v cc = 200v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c switching time [ns] g a te r e sista n ce , r g [ ]
5 www.fairchildsemi.com FGA90N30 rev. b FGA90N30 300v pdp igbt typical performance characteristics (continued) figure 13. turn-on characteristics vs. figure 14.turn-off characteristics vs. collector current collector current figure 15. switching loss vs. gate resistance figure 16.switching loss vs. collector current 0 20406080100 10 100 1000 comm on emitter v ge = 15v, r g = 10 t c = 25 o c t c = 125 o c tr td(on) c o llecto r c u rre n t , ic [a ] switching time [ns] 0 20406080100 10 100 1000 tf td(off) c ollector c urren t , ic [a ] switching time [ns] com m on em itter v ge = 15v, r g = 10 t c = 25 o c t c = 125 o c 0 20406080100 0.01 0.1 1 eon eoff g a te r e sista n ce , r g [ ] switching loss [mj] comm on emitter v cc = 200v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c 020406080100 0.01 0.1 1 10 common emitter v ge = 15v, r g = 10 t c = 25 o c t c = 125 o c c ollector c urrent , ic [a ] eoff eon switching loss [mj] figure 17. turn-off soa figure 1 10 100 1000 10 100 1000 safe operating area v ge = 20v, t c = 100 o c collector current, i c [a] collector-emitter voltage, v ce [v]
6 www.fairchildsemi.com FGA90N30 rev. b FGA90N30 300v pdp igbt typical performance characteristics (continued) figure 18. transient thermal impedance of igbt 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 0.1 0.5 0.2 0.05 0.02 0.01 single pulse thermal response [zthjc] rectangular pulse duration [sec] pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm zthjc + t c
7 www.fairchildsemi.com FGA90N30 rev. b FGA90N30 300v pdp igbt mechanical dimensions to-3p 15.60 0.20 4.80 0.20 13.60 0.20 9.60 0.20 2.00 0.20 3.00 0.20 1.00 0.20 1.40 0.20 ?3.20 0.10 3.80 0.20 13.90 0.20 3.50 0.20 16.50 0.30 12.76 0.20 19.90 0.20 23.40 0.20 18.70 0.20 1.50 +0.15 ?0.05 0.60 +0.15 ?0.05 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ]
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careers | sitema go datasheets, samples, buy technical information applications design center support company investors my f a home >> find products >> product status/pricing/packaging FGA90N30 300v pdp igbt general description back to top features back to top contents ? general description ? features ? product status/pricing/packaging ? order samples ? qualification support employing unified igbt technology, FGA90N30 provides low conduction and switching loss. FGA90N30 offe rs the optimum so lution for pdp applications where low condution loss is essential. z high current capability z low saturation voltage: v ce(sat) , typ = 1.1v@ i c = 20a z high input impedance datasheet download this datasheet e - mail this datasheet this page print version product product status pb-free status pricing* package type leads packing method package marking convention** FGA90N30tu full production $3.42 to - 3p 3 rail line 1: $y (fairchild logo) line 2: FGA90N30 line 3: &3 * fairchild 1,000 piece budgetary pricing ** a sample button will appear if the part is available through fa irchild's on-line samples program. if there is no sample butt on, please contact a fairchild distributo r to obtain samples related links request samples how to order products product change notices (pcns) support sales support quality and reliability design cente r pa g e 1 of 2 product folder - fairchild p/n FGA90N30 - 300v pdp igbt 17-au g -2007 mhtml:file://c:\temp\FGA90N30tu.mht
back to top qualification support click on a product for detailed qualification data back to top indicates product with pb -free second-level interconne ct. for more information click here. package marking information for product FGA90N30 is available. click here for more information . product FGA90N30tu ? 2007 fairchild semiconductor products | design center | support | company news | investors | my fairchild | contact us | site index | privacy policy | site terms & conditions | standard terms & conditions o pa g e 2 of 2 product folder - fairchild p/n FGA90N30 - 300v pdp igbt 17-au g -2007 mhtml:file://c:\temp\FGA90N30tu.mht
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